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| polyfet rf devices General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features gold metal for greatly extended lifetime. Low output capacitance and high F t enhance broadband performance TM F1108 PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 80 Watts Gemini Package Style AK HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE ABSOLUTE MAXIMUM RATINGS (TC = 25 C) Total Device Dissipation 170 Watts Junction to Case Thermal Resistance 0.95 o C/W Maximum Junction Temperature 200 o C Storage Temperature DC Drain Current Drain to Gate Voltage 70 V Drain to Source Voltage 70 V Gate to Source Voltage 30V o -65 o C to 150o C 8A RF CHARACTERISTICS ( SYMBOL Gps PARAMETER Common Source Pow er Gain Drain Efficiency Load Mismatch Tolerance MIN 11 55 TYP 80WATTS OUTPUT ) MAX UNITS dB % 20:1 Relative TEST CONDITIONS Idq = 0.8 A, Vds = 28.0 V, F = 400 MHz Idq = 0.8 A, Vds = 28.0 V, F = 400 MHz Idq = 0.8 A, Vds = 28.0 V, F = 400 MHz VSWR ELECTRICAL CHARACTERISTICS (EACH SIDE) SYMBOL Bvdss Idss Igss Vgs gM Rdson Idsat Ciss Crss Coss PARAMETER Drain Breakdow n Voltage Zero Bias Drain Current Gate Leakage Current Gate Bias for Drain Current Forw ard Transconductance Saturation Resistance Saturation Current Common Source Input Capacitance Common Source Feedback Capacitance Common Source Output Capacitance 1 2 0.7 12 80 10 60 MIN 65 2 1 7 TYP MAX UNITS V mA uA V Mho Ohm Amp pF pF pF TEST CONDITIONS Ids = 0.1 A, Vgs = 0V Vgs = 0V Vgs = 30V Vgs = Vds Vds = 28.0 V, Vds = 0 V, Ids = 0.2 A, Vds = 10V, Vgs = 5V Vgs = 20V, Ids = 8 A Vgs = 20V, Vds = 10V Vds = 28.0 V, Vgs = 0V, F = 1 MHz Vds = 28.0 V, Vgs = 0V, F = 1 MHz Vds = 28.0 V, Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 8/1/97 1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:w w w .polyfet.com F1108 POUT VS PIN GRAPH F1108 POUT VS PIN F=400 MHZ; IDQ =0.8A; VDS=28.0V 1000 CAPACITANCE VS VOLTAGE F1J 2 DICE CAPACITANCE 90 80 70 60 50 40 30 20 10 0 0 1 15.50 14.50 100 Coss GAIN IN DB POUT IN WATTS 13.50 12.50 Efficiency = 55% 11.50 10.50 9.50 2 3 4 5 POUT Ciss 10 Crss 1 0 5 10 15 20 25 30 6 GAIN PININ WATTS VDS IN VOLTS IV CURVE F1J 2 DIE IV CU RVE ID AND GM VS VGS F1J2 DICE ID & GM Vs VG 100.00 18 16 14 12 10 8 6 4 2 0 0 2 4 6 8 10 Vds in Volts Id in amps; Gm in mhos Id 10.00 1.00 gM 0.10 12 14 16 18 20 0 Vg = 8V Vg = 10V Vg = 12V 2 4 6 8 1 0 1 2 1 4 1 6 1 8 Vg = 2V Vg = 4V Vg = 6V V in V gs olts S11 AND S22 SMITH CHART PACKAGE DIMENSIONS IN INCHES Tolerance 0.XX +/- 0.01 0.XXX +/- 0.005 inches POLYFET RF DEVICES REVISION 8/1/97 1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:Sales@polyfet.com URL:w w w .polyfet.com |
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